| PART |
Description |
Maker |
| XC18V512 XC18V01 |
In-System Programmable Configuration PROMs(在系统可编程配置PROM)
In-System Programmable Configuration PROMs(?ㄧ郴缁??缂????疆PROM)
|
Xilinx, Inc.
|
| XCF01 XCF16PFS48 |
Configuration Proms
|
XILINX
|
| 27C64 |
64K (8K x 8) CHMOS Production and UV Erasable PROMS
|
Intel
|
| DM5516A DM5516AH |
Timer E2 16K Electrically Erasable PROMs
|
Seeq Technology
|
| XC2VP30 |
(XC2VPxxx) Platform Flash In-System Programmable Configuration PROMS
|
Xilinx
|
| XC17S30 |
Spartan Family of One-Time Programmable Configuration PROMs(Spartan系列一次可编程配置PROM) Spartan系列一次性可编程配置PROM的（斯巴达系列一次可编程配置可编程）
|
Xilinx, Inc.
|
| 17S100A |
Spartan-II/Spartan-IIE Family OTP Configuration PROMs
|
Xilinx
|
| BR34E02FVT-3 |
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
|
Rohm
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
